Referenced Items are not available for this document.
A self-aligned WSi gate heterostructure insulated-gate field-effect transistor (HIGFET) with a gate length of 1 μm was fabricated using an AlInAs/GaInAs heterostructure grown by atmospheric pressure metal-organic chemical vapor deposition (MOCVD). The gate current is investigated experimentally and theoretically. The measured gate current was found to be about two orders of magnitude higher than predicted by theory. The origin of this increase is unclear. However, the theoretical result suggests the possibility of reducing the gate current in AlInAs/GaInAs HIGFETs
Published in:
Electron Devices, IEEE Transactions on
(Volume:40
,
Issue:
8
)
Date of Publication: Aug 1993
- Page(s):
- 1358 - 1363
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4520633
- Digital Object Identifier :
- 10.1109/16.223692
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug 1993
- Sponsored by :
- IEEE Electron Devices Society
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