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Effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors

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3 Author(s)
R. G. Murowinski ; Dominion Astrophys. Obs., Victoria, BC, Canada ; G. Linzhuang ; M. J. Deen

Lightly doped drain (LDD) MOS transistors were subjected to proton radiation damage representative of the damage they would receive on a typical orbital space telescope mission. The noise spectral density was measured as a function of gate voltage, temperature and total radiation dose. These data were used to model the resultant noise lower limit read for that transistor when used as the charge-conversion, output stage of a charge-coupled-device (CDD) imaging array detector. Very clear evidence of excess noise being added to the CCD output as a function of radiation was found. It is possible to select combinations of temperature, CCD dual-correlated sample time constant and gate voltage which minimize the performance degradation due to this excess noise

Published in:

IEEE Transactions on Nuclear Science  (Volume:40 ,  Issue: 3 )