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Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser

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5 Author(s)
K. Sato ; NTT Optoelectron Labs., Atsugi, Japan ; I. Kotaka ; K. Wakita ; Y. Kondo
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The monolithic integration of a strained-InGaAsP MQW electroabsorption modulator and a DFB laser using only two-step MOVPE growth is described. The extinction ratio is 20 dB with a low-driving voltage of 1.4 V for an optical power density of 102 kW/cm2.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 12 )