Referenced Items are not available for this document.
Static frequency dividers have been fabricated in a selective epitaxial bipolar technology using 0.8 mu m lithography. The measured maximum frequency of 25 GHz is the highest value reported for static silicon dividers. Moreover, a 16 GHz low-power version is presented which consumes only 8 mW in the first stage.
Published in:
Electronics Letters
(Volume:29
,
Issue:
12
)
Date of Publication: 10 June 1993
- Page(s):
- 1072 - 1074
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4469127
- Digital Object Identifier :
- 10.1049/el:19930716
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 10 June 1993
- Sponsored by :
- Institution of Engineering and Technology
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