The delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power high-speed photoconductive switching devices is discussed. The field- and laser-energy-dependent optical absorption coefficient is used to explain the experimentally observed open-state-field, and laser-energy-dependent delay time. Calculations are shown to agree with the experimental results.<
Published in:
Photonics Technology Letters, IEEE
(Volume:5
,
Issue:
6
)
Date of Publication: June 1993