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Delay time in GaAs high-power high-speed photoconductive switching devices

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4 Author(s)
L. Q. Zu ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA ; Y. Lu ; H. Shen ; M. Dutta

The delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power high-speed photoconductive switching devices is discussed. The field- and laser-energy-dependent optical absorption coefficient is used to explain the experimentally observed open-state-field, and laser-energy-dependent delay time. Calculations are shown to agree with the experimental results.<>

Published in:

IEEE Photonics Technology Letters  (Volume:5 ,  Issue: 6 )