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Reduction of damping in high-speed semiconductor lasers

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4 Author(s)
Wang, G. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Nagarajan, R. ; Tauber, D. ; Bowers, J.

An analytical expression for the intrinsic gain suppression factor based on carrier heating is derived. The theory shows good agreement with the published experimental value of in =+1.5*10/sup -17/ cm/sup 3/ for in-plane lasers. For the first time, a negative gain suppression factor for particular laser designs is predicted and experimentally observed. A negative gain suppression factor can lead to the elimination of damping in semiconductor lasers. Using vertical-cavity surface-emitting lasers, a negative gain suppression factor of -2.2*10/sup -17/ cm/sup 3/ is observed.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 6 )