Dependence of differential quantum efficiency on the confinement structure in InGaAs/InGaAsP strained-layer multiple quantum-well lasers

An internal efficiency of 91% was obtained with In/sub 0.7/Ga/sub 0.3/As/InGaAsP strained-layer multiple quantum well (MQW) lasers emitting at a wavelength of 1.5 mu m. The dependence of the reciprocal differential quantum efficiency on the length of the laser cavity shows that the absorption loss in the InGaAsP ( lambda =1.3 mu m) confinement layer caused by carrier overflowing into the confinement layer reduces the internal efficiency.<
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