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Long-term charge storage in GaP pn junction capacitors

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6 Author(s)
Y. Wang ; Purdue Univ., West Lafayette, IN, USA ; J. Ramdani ; Y. He ; S. M. Bedair
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pn junction storage capacitors are fabricated in GaP grown by gas source MBE. Storage times are thermally activated with activation energies between 1.10 and 1.38 eV. At 125 degrees C, the GaP recovery times are approximately 50 times longer than the best GaAs devices.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 13 )