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InGaAs-cap-monitor integrated 1.55 μm λ/4-shifted DFB lasers with higher output design

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4 Author(s)
M. Usami ; KDD Res. & Dev. Lab., Tokyo, Japan ; S. Akiba ; K. Utaka ; Y. Matsushima

An InGaAs-cap-monitor photodiode is monolithically integrated with a 1.55 μm InGaAsP/InP λ/4-shifted DFB laser that has a higher output design. The optical coupling between the laser and the monitor is calculated using a Gaussian beam approximation, which shows that 20-40% of the rear light output can be monitored. The actual ratio of monitor current to front output at a temperature of 10-40°C is typically 0.1-0.2 mA/mW. It is shown that the integrated cap-monitor can be used, not only for the control of the laser power, but also for probing the threshold current and the single-wavelength property of an individual laser in a wafer, without cleaving out into chips. For the laser part with an antireflecting coating on the front facet, the maximum output power of 30 mW at 25°C and the highest CW temperature (as high as 100°C in p-side-up bonding) were obtained

Published in:

IEE Proceedings J - Optoelectronics  (Volume:135 ,  Issue: 4 )