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Direct nonlinear FET parameter extraction using large-signal waveform measurements

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3 Author(s)
Werthorf, A. ; Dept. of High Frequency Eng., Kassel Univ., Germany ; van Raay, F. ; Kompa, G.

A method that permits a direct nonlinear extraction of two FET parameters, the drain current generator, and the gate source capacitor from large-signal waveform measurements, is presented. For demonstration, the high-frequency characteristics of the nonlinear drain current generator for a GaAs MESFET and a MODFET are extracted. Significant differences between the DC and RF characteristics, are observed and interpreted.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:3 ,  Issue: 5 )