By Topic

Modelling of the sidegating and the backgating effects in GaAs MESFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kwok, H.L. ; Dept. of Electr. & Comp. Eng., Victoria Univ., BC, Canada

Sidegating and backgating effects affect the I/V characteristics of a GaAs MESFET built on SI substrates. The basic charge trapping, process can be related to current flowing through the channel substrate interface. This effectively changes the channel thickness. For the side-gating effect, the observed voltage threshold for current pinch-off is explained by the breakdown of a parasitic lateral npn transistor. An equivalent circuit model is put forward to include the sidegating and backgating effects. Reasonable results have been obtained during simulation.<>

Published in:

Circuits, Devices and Systems, IEE Proceedings G  (Volume:137 ,  Issue: 6 )