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Modelling of the sidegating and the backgating effects in GaAs MESFETs

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1 Author(s)
Kwok, H.L. ; Dept. of Electr. & Comp. Eng., Victoria Univ., BC, Canada

Sidegating and backgating effects affect the I/V characteristics of a GaAs MESFET built on SI substrates. The basic charge trapping, process can be related to current flowing through the channel substrate interface. This effectively changes the channel thickness. For the side-gating effect, the observed voltage threshold for current pinch-off is explained by the breakdown of a parasitic lateral npn transistor. An equivalent circuit model is put forward to include the sidegating and backgating effects. Reasonable results have been obtained during simulation

Published in:

Circuits, Devices and Systems, IEE Proceedings G  (Volume:137 ,  Issue: 6 )