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Electrical characterisation of the insulating property of Ta2 O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency C/V technique

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2 Author(s)
Hwu, J.-G. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Lin, S.-T.

The measurement of equivalent low-frequency capacitance is used as an efficient method to monitor the insulating properties of Ta2 O5 in Al-Ta2O5-SiO2-Si (MTOS) structures. It is found however, that MTOS devices having normal high-frequency C/V characteristics can have significantly different behaviour at low frequencies. A technique is proposed in this work that enables the quality of the Ta2O 5 preparation to be determined. Examples showing the importance of the measurement of the equivalent low-frequency capacitance are also given

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Circuits, Devices and Systems, IEE Proceedings G  (Volume:137 ,  Issue: 5 )