By Topic

pMOS transistors, intrinsic mobility and their surface degradation parameters at cryogenic temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Deen, M.J. ; Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada ; Wang, J.

The intrinsic low-field mobility μ0 and the mobility surface-degradation constants θ0 and θB in varying channel length pMOS transistors at cryogenic temperatures are presented. It was found the μ0 increased from 180 cm2/V s at 300 K to 1260 cm2/V at 77 K, and that θ0 also increased with 0.10 at 300 K to 0.49 at 77 K. These two parameters were extracted using an analytical model for the pMOS devices in its ohmic mode of operation that is very suitable for use in circuit simulation programs such as SPICE

Published in:

Circuits, Devices and Systems, IEE Proceedings G  (Volume:137 ,  Issue: 1 )