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A study of residual stress distribution through the thickness of p + silicon films [thermal oxidation effects]

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2 Author(s)
Chu, W.-H. ; Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA ; Mehregany, M.

The effect of thermal oxidation on the residual stress distribution throughout the thickness of heavily-boron-doped (p+ ) silicon films is studied. The deflection of p+ silicon cantilever beams due to residual stress variation throughout the film thickness is studied for as-diffused and thermally oxidized films. Cantilevers of as-diffused p+ silicon films display a positive curvature (or a negative bending moment), signified by bending up of the beams. Thermal oxidation of the films prior to cantilever fabrication by anisotropic etching modifies the residual stresses in the p+ film, specially in the near-surface region (i.e. the top 0.3 to 0.5 μm for the oxidation times used here), and can result in beams with a negative curvature even when the oxide is removed from the p+ silicon cantilever surface subsequent to cantilever fabrication

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 7 )

Date of Publication:

Jul 1993

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