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Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

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4 Author(s)
Sin, Y.K. ; Oki Electric Industry Co. Ltd., Tokyo, Japan ; Horikawa, H. ; Matsui, Y. ; Kamijoh, T.

The authors report ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process for computer interconnects. Uncoated 350 mu m-long buried heterostructure lasers show an extremely low laser threshold of 0.8 mA and a high slope efficiency of 0.41 mW/mA per facet both measured CW at RT, and a high relaxation oscillation frequency of 5.1 GHz at a bias current of 4 mA.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 10 )