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Browse Journals & Magazines > Electronics Letters ...> Volume:29 Issue:10 Help

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

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8 Author(s)
Gee, R.C. ; California Univ., San Diego, La Jolla, CA, USA ; Lin, C.L. ; Farley, C.W. ; Seabury, C.W.
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High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*1019 cm-3 were obtained, using CCl4 as the dopant source. Transistors with 2*10 mu m2 emitters achieved ft and fmax values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of fmax.

Published in:
Electronics Letters  (Volume:29 ,  Issue: 10 )

Date of Publication: 13 May 1993

Page(s):
850 - 851
ISSN :
0013-5194
INSPEC Accession Number:
4434004
Digital Object Identifier :
10.1049/el:19930568
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
13 May 1993
Sponsored by :
Institution of Engineering and Technology

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