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InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

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8 Author(s)
R. C. Gee ; California Univ., San Diego, La Jolla, CA, USA ; C. L. Lin ; C. W. Farley ; C. W. Seabury
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High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*1019 cm-3 were obtained, using CCl4 as the dopant source. Transistors with 2*10 mu m2 emitters achieved ft and fmax values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of fmax.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 10 )