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High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*1019 cm-3 were obtained, using CCl4 as the dopant source. Transistors with 2*10 mu m2 emitters achieved ft and fmax values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of fmax.