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0.5 mu m gate length InP/In0.75Ga0.25As/InP pseudomorphic HEMT with high DC and RF performance

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7 Author(s)

High performance InP/In0.75Ga0.25As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 mu m are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 10 )