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Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide

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13 Author(s)
Yuan Taur ; IBM Thomas J. Watson Center, Yorktown Heights, NY, USA ; Cohen, S. ; Wind, S. ; Lii, T.
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Very-high-transconductance 0.1 mu m surface-channel pMOSFET devices are fabricated with p/sup +/-poly gate on 35 AA-thick gate oxide. A 600 AA-deep p/sup +/ source-drain extension is used with self-aligned TiSi/sub 2/ to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 6 )