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An emitter switched thyristor with base resistance control

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3 Author(s)
Shekar, M.S. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Nandakumar, M. ; Baliga, B.Jayant

An MOS-gated emitter-switched thyristor structure with base resistance control, which combines the best features of both the emitter-switched thyristor (EST) and the base-resistance-controlled thyristor (BRT), is reported. With this structure, it is possible to obtain turn-off (dynamic) current densities above the static latch-up current density of the parasitic thyristor in the EST, while preserving its unique current saturation capability. It has been experimentally demonstrated for 600 V forward blocking devices that the maximum controllable current density under dynamic conditions is a function of both the gate bias and the dimensions of the N/sup +/ floating emitter. Turn-off measurements have demonstrated that the new structure has a maximum controllable current density of over 2.5 times that for the EST structure without base resistance control.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 6 )