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A physical model for the gate current injection in p-channel MOSFET's

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2 Author(s)
I. -C. Chen ; Texas Instrum. Inc., Dallas, TX, USA ; S. J. Wang

A quantitative physical model for calculating the hot-electron injection probability, I/sub G//I/sub SUB/, for both buried and surface p-channel MOSFETs is presented. The model utilizes the two-dimensional potential contours generated by PISCES, and integrates the probability of substrate hot-electron injection across the high-field region near the drain. The known phenomenon that buried-channel (BC) PMOS has higher hot-electron injection probability but lower channel field (I/sub SUB//I/sub D/) than a similar surface-channel (SC) device is successfully modeled. This phenomenon can be attributed to the larger energy band hump-up near the drain and the larger oxide field (and thus greater barrier lowering) at a given bias condition for the buried-channel device. The I/sub G/ characteristics can be obtained from the calculated I/sub G//I/sub SUB/ ratio, using readily available I/sub SUB/ values.<>

Published in:

IEEE Electron Device Letters  (Volume:14 ,  Issue: 5 )