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MICROX-an all-silicon technology for monolithic microwave integrated circuits

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11 Author(s)
Hanes, M.H. ; Westinghouse Sci. & Technol. Center, Pittsburgh, PA, USA ; Agarwal, A.K. ; O'Keeffe, T.W. ; Hobgood, H.M.
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An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent electrical isolation between devices, and low-loss microstrip lines. The concept, called MICROX (patent pending), is based on the SIMOX process, but uses very-high-resistivity (typically>10000 Omega -cm) silicon substrates, MICROX NMOS transistors of effective gate length 0.25 mu m give a maximum frequency of operation, f/sub max/, of 32 GHz and f/sub T/ of 23.6 GHz in large-periphery (4 mu m*50 mu m) devices with no correction for the parasitic effects of the pads. The measured minimum noise figure is 1.5 dB at 2 GHz with associated gain of 17.5 dB, an improvement over previously reported values for silicon FETs.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 5 )