Referenced Items are not available for this document.
Effects of rapid thermal annealing (RTA) on sub-100 nm p/sup +/-n Si junctions fabricated using 10 kV FIB Ga/sup +/ implantation at doses ranging from 10/sup 13/ to 10/sup 15/ cm/sup -2/ are reported. Annealing temperature and time were varied from 550 to 700 degrees C and 30 to 120 s. It was observed that a maximum in the active carrier concentration is achieved at the critical annealing temperature of 600 degrees C. Temperatures above and below the critical temperature were followed by a decrease in the active concentration, leading to a 'reverse' annealing effect.<
Published in:
Electron Device Letters, IEEE
(Volume:14
,
Issue:
3
)
Date of Publication: March 1993
- Page(s):
- 123 - 125
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4389445
- Digital Object Identifier :
- 10.1109/55.215132
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 1993
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
