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Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown

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6 Author(s)
Xiaoyu Li ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Jen-Tai Hsu ; Aum, Paul ; Chan, David
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The oxide damage resulting from exposure to a plasma environment in four different dry-etch tools was investigated using both hot-carrier injection (HCI) and time-dependent dielectric breakdown (TDDB). A strong correlation was observed between hot-carrier injection results and time-dependent dielectric breakdown results. It was found that a damaged oxide has both a lower critical energy for HCI to create an interface trap, and a lower activation energy for Fowler-Nordheim injection to create a hole in the oxide. These results also suggest that in dry etching, possibly more damage occurs in the metal step than in the contact etch step.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 2 )