Referenced Items are not available for this document.
The oxide damage resulting from exposure to a plasma environment in four different dry-etch tools was investigated using both hot-carrier injection (HCI) and time-dependent dielectric breakdown (TDDB). A strong correlation was observed between hot-carrier injection results and time-dependent dielectric breakdown results. It was found that a damaged oxide has both a lower critical energy for HCI to create an interface trap, and a lower activation energy for Fowler-Nordheim injection to create a hole in the oxide. These results also suggest that in dry etching, possibly more damage occurs in the metal step than in the contact etch step.<
Published in:
Electron Device Letters, IEEE
(Volume:14
,
Issue:
2
)
Date of Publication: Feb. 1993
- Page(s):
- 91 - 93
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4392714
- Digital Object Identifier :
- 10.1109/55.215118
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1993
- Sponsored by :
- IEEE Electron Devices Society
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