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Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation

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3 Author(s)
J. Laskar ; Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA ; M. Feng ; J. Kruse

Noise generated in a system establishes the fundamental limitation on the performance of all communication systems and can be characterized with both minimum noise figure (NF/sub min/) and bit error rate (BER). The development of data processing and transmission into the gigabit/second range requires a detailed understanding of the correlation between NF/sub min/ and BER. The authors report on the cryogenic microwave measurements of NF/sub min/, current gain cutoff frequency (F/sub t/), and BER at 3 Gb/s of 0.6- mu m GaAs MESFETs. The noise characterization of GaAs-based MESFET devices and circuits is significant because GaAs-based MESFETs are clearly the key industry device for both digital and analog applications.<>

Published in:

IEEE Electron Device Letters  (Volume:14 ,  Issue: 2 )