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Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)

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5 Author(s)
Flandre, D. ; Lab. de Microelectron., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium ; Terao, A. ; Francis, P. ; Gentinne, B.
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Measurements of accumulation-mode (AM) MOS SOI transistors in the 150-300 degrees C temperature range are reported and discussed. The increases of the threshold voltage shift and off leakage current with temperature of these SOI p-MOSFETs are observed to be much smaller than their bulk equivalents. Simple models are presented to support the experimental data.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 1 )