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A numerical model resulting in the current-voltage characteristics of standard and heteroepitaxial Schottky-barrier diodes is presented. Simulations of GaAs diodes, as well as InGaAs diodes grown on GaAs and InP substrates, are presented. The model considers quantum-mechanical tunneling, and is therefore applicable to highly doped devices. A self-consistent drifted-Maxwellian distribution is used to model the electron energy distribution at high current densities. The assumption of a drifted-Maxwellian distribution is shown to lead to higher current at high bias than predicted with the assumption of a Maxwell-Boltzmann or Fermi-Dirac distribution. The presence of a heterojunction at the InGaAs-substrate interface is predicted to lead to an additional series resistance component
Published in:
Electron Devices, IEEE Transactions on
(Volume:40
,
Issue:
6
)
Date of Publication: Jun 1993
- Page(s):
- 1038 - 1046
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4447668
- Digital Object Identifier :
- 10.1109/16.214726
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1993
- Sponsored by :
- IEEE Electron Devices Society
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