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Numerical simulation of the current-voltage characteristics of heteroepitaxial Schottky-barrier diodes

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2 Author(s)
U. V. Bhapkar ; Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA ; R. J. Mattauch

A numerical model resulting in the current-voltage characteristics of standard and heteroepitaxial Schottky-barrier diodes is presented. Simulations of GaAs diodes, as well as InGaAs diodes grown on GaAs and InP substrates, are presented. The model considers quantum-mechanical tunneling, and is therefore applicable to highly doped devices. A self-consistent drifted-Maxwellian distribution is used to model the electron energy distribution at high current densities. The assumption of a drifted-Maxwellian distribution is shown to lead to higher current at high bias than predicted with the assumption of a Maxwell-Boltzmann or Fermi-Dirac distribution. The presence of a heterojunction at the InGaAs-substrate interface is predicted to lead to an additional series resistance component

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 6 )