Referenced Items are not available for this document.
The monolithic integration of a strained layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by conventional atmospheric pressure metalorganic chemical vapor growth is discussed. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region.<
Published in:
Photonics Technology Letters, IEEE
(Volume:5
,
Issue:
4
)
Date of Publication: April 1993
- Page(s):
- 448 - 450
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 4453442
- Digital Object Identifier :
- 10.1109/68.212695
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- April 1993
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
