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Effect of conduction-band discontinuity on lasing characteristics of 1.5 mu m InGaAs/In(Ga)AlAs MQW-FP lasers

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4 Author(s)
Wakatsuki, A. ; NTT Opto-Electron. Lab., Kanagawa, Japan ; Kawamura, Y. ; Noguchi, Y. ; Iwamura, H.

The characteristic temperature (T/sub 0/), relaxation frequency (f/sub r/), differential gain (dg/dn) and nonlinear gain coefficient ( epsilon ) of 1.5- mu m InGaAs/In(Ga)AlAs multiple-quantum-well (MQW) Fabry-Perot (FP) lasers grown by gas source molecular beam epitaxy (GSMBE) are reported. It is found that T/sub 0/ is little affected by the difference in the conduction band discontinuity. A maximum T/sub 0/ value of 86 K is obtained. The dg/dn and epsilon in were calculated from the slope of the f/sub r/ versus square root power plot and the damping K-factor. It is demonstrated that dg/dn and epsilon of InGaAs/In(Ga)AlAs MQW lasers increase with an increase in the conduction band discontinuity.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 4 )