By Topic

Single event upset in avionics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Taber, A. ; IBM Federal Systems Co., Owego, NY, USA ; Normand, E.

Data from military/experimental flights and laboratory testing indicate that typical non-radiation-hardened 64 K and 256 K static random access memories (SRAMs) can experience a significant soft upset rate at aircraft altitudes due to energetic neutrons created by cosmic ray interactions in the atmosphere. It is suggested that error detection and correction circuitry be considered for all avionics designs containing large amounts of semiconductor memory

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 2 )