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Neutron-induced single event upsets in static RAMS observed a 10 km flight attitude

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5 Author(s)
Olsen, J. ; Riso Nat. Lab., Roskilde, Denmark ; Becher, P.E. ; Fynbo, P.B. ; Raaby, P.
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Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8×10-8 upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs

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Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 2 )