Cart (Loading....) | Create Account
Close category search window
 

Neutron-induced single event upsets in static RAMS observed a 10 km flight attitude

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Olsen, J. ; Riso Nat. Lab., Roskilde, Denmark ; Becher, P.E. ; Fynbo, P.B. ; Raaby, P.
more authors

Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8×10-8 upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 2 )

Date of Publication:

Apr 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.