Referenced Items are not available for this document.
Novel methods for parameter extraction for bipolar transistors are presented. Emphasis is placed on reliable measurements of small-size transistors, examples are shown for Si integrated circuit transistors with emitters smaller than 10 μm2. Advantages over measurements on large-area test devices are discussed. Parameters measured are the current-dependent base and emitter series resistances, emitter contact resistance, base-emitter and base-collector space-charge region capacitances, junction temperature, and base and collector saturation currents. Applications to heterojunction bipolar transistors are demonstrated
Published in:
Electron Devices, IEEE Transactions on
(Volume:36
,
Issue:
1
)
Date of Publication: Jan 1989
- Page(s):
- 88 - 95
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3354529
- Digital Object Identifier :
- 10.1109/16.21183
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1989
- Sponsored by :
- IEEE Electron Devices Society
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