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Radiation effects in Ga0.47In0.53As devices

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5 Author(s)
Walters, R.J. ; US Naval Res. Lab., Washington, DC, USA ; Shaw, G.J. ; Summers, G.P. ; Burke, E.A.
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The effects of irradiating Ga0.47In0.53As solar cells and p-i-n photodiodes with 1-MeV electrons were measured using deep level transient spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) I-V measurements. Fits of the dark I-V data to the two-term diode equation before irradiation were satisfactory, yielding an estimated bandgap energy of 0.79 eV. The DLTS detected two radiation-induced defect levels, one shallow (0.10 eV) and one near mid-gap (0.29 eV). Temperature coefficients of the Ga0.47In 0.53As photovoltaic parameters follow the same general behavior as for other solar cell materials (e.g., Si and GaAs). However, a sharp decrease in the short circuit current is observed above ≈375 K. This temperature is reduced by irradiation. Isochronal thermal annealing induced recovery in the photovoltaic parameters at ≈400 K, coinciding with an annealing stage of the near mid-gap defect level

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Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 6 )