By Topic

New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis [MOS capacitors]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Fleetwood, D.M. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Miller, S.L. ; Reber, R.A., Jr. ; McWhorter, P.J.
more authors

An analytical model with no free parameters has been developed which accurately describes thermally-stimulated-current (TSC) measurements spanning more than a factor of 50 in average heating rate. The model incorporates Schottky electric-field-induced barrier lowering and a temperature-dependent `attempt-to-escape frequency' equal to ~10 14 Hz at 300°C. Applying this model to TSC measurements provides significantly improved estimates of the energy distribution of trapped holes in irradiated SiO2. All devices examined, including soft and (wet and dry) hard oxides from five process technologies, show similar energy distributions, with a minor peak at ~1.2 eV and a broad major peak centered ~1.7-2.0 eV above the SiO2 valance band. It is found that the trapped-electron density in irradiated SiO2 is proportional to the trapped-hole density over a wide range of irradiation conditions

Published in:

Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 6 )