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Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

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3 Author(s)
W. Chen ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; A. Balasinski ; T. -P. Ma

Using a rapid charge pumping technique, it was found that the mean capture cross-section of interface traps in MOSFETs sharply decreased immediately after irradiation. Further changes of the capture cross-section during subsequent relaxation depended on the gate bias during both irradiation and storage. Radiation dose dependence has also been investigated. Possible mechanisms and correlations between interface-trap density and capture cross-section are discussed

Published in:

IEEE Transactions on Nuclear Science  (Volume:39 ,  Issue: 6 )