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Generation lifetime, interface state density, active defect density and oxide resistivity measurements for SOI-MOSFETs and their radiation dependence

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2 Author(s)
Kimpton, D. ; GEC Plessey Semiconductors, Lincoln, UK ; Kerr, J.

The authors report on extremely sensitive technique for the evaluation of the intrinsic material properties of silicon-on-insulator (SOI) wafers in order to relate these to the electrical performance of the manufactured devices. This simple and novel, single measurement technique permits the assessment of the true film generation lifetime, both top and buried interface state densities, corresponding oxide resistivities, and SOI film electrically active defect density. Typical values obtained were 300 μs, 5×109 cm-2 eV-1, 1010 cm-2 eV-1, 3×1016 Ω-cm, 1016 Ω-cm, and 3×104 active defects cm-2, respectively. This method was then used to evaluate changes in these parameters with total dose irradiation, e.g., the film generation lifetime was degraded to 50 μs and both interface state densities increased to 1011 cm-2 eV-1 following gate biased ARACOR irradiation to 100 Krads(Si)

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Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 6 )