By Topic

Silicon carbide JFET radiation response

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
McGarrity, J.M. ; Harry Diamond Labs., Adelphi, MD, USA ; McLean, F.B. ; DeLancey, W.M. ; Palmour, J.
more authors

Total dose and neutron-induced displacement damage effect studies are reported for n-channel, 2-μm channel length, depletion mode junction-field-effect-transistors (JFETs) fabricated on 6H-silicon carbide. Very little effect was observed on device characteristics for total dose ionizing radiation for doses up to 100 Mrads(Si), but the devices were significantly degraded after a neutron fluence of 1016 n/cm2. A value of 4.5±0.5 carriers/cm3 /neutrons/cm was obtained for the carrier removal rate from neutron irradiation. The results offer promise for SiC devices to be used in applications which combine high-temperature and radiation environments, where the use of Si and GaAs technologies is limited

Published in:

Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 6 )