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Observations of single-event upsets in non-hardened high-density SRAMs in Sun-synchronous orbit

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4 Author(s)
C. I. Underwood ; Surrey Satellite Technol. Ltd., Surrey Univ., Guildford, UK ; J. W. Ward ; C. S. Dyer ; A. J. Sims

Observations of single-event upset (SEU) activity in nonhardened static and dynamic RAMs of both low (16-kb) and high (256-kb, 1-Mb), density are presented for a family of small spacecraft in low-earth, near-polar, Sun-synchronous orbits. The observation of single-event multiple-bit upset (MBU) in these devices is discussed, and the implications of such events for error-protection coding schemes are examined. Contrary to expectations, the 1-Mb static RAMs (SRAMs) are more resilient to SEU than the 256-kb SRAMs, and one type of commercial 1-Mb SRAM shows a particularly low error rate

Published in:

IEEE Transactions on Nuclear Science  (Volume:39 ,  Issue: 6 )