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Mechanism for single-event burnout of power MOSFETs and its characterization technique

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4 Author(s)
S. Kuboyama ; Nat. Space Dev. Agency of Japan, Ibaraki, Japan ; S. Matsuda ; T. Kanno ; T. Ishii

A novel characterization technique for single event burnout (SEB) of power MOSFETs was developed. The technique is based on a pulse-height analyzer system for charge collection measurement with a modified charge-sensitive amplifier which has a very wide dynamic range. The data obtained by this technique give detailed information about the SEB mechanism of power MOSFETs. The experimental data suggested a position-independent charge collection mechanism along an ion track, and a new parameter for SEB hardness was proposed

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IEEE Transactions on Nuclear Science  (Volume:39 ,  Issue: 6 )