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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:39 Issue:6 Help

A comparison of charge collection effects between GaAs MESFETs and III-V HFETs

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4 Author(s)
Hughlock, B. ; Boeing Defense & Space Group, Seattle, WA, USA ; Johnston, A. ; Williams, T. ; Harrang, J.

The ion-induced gate edge effect and excess charge collection effect present in GaAs MESFETs are not present in InP and GaAs HFETs. An SEU (single event upset) characterization study shows that these devices can provide an SEU rate which is lower than that of unhardened CMOS

Published in:
Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 6 )

Date of Publication: Dec 1992

Page(s):
1642 - 1646
ISSN :
0018-9499
INSPEC Accession Number:
4404736
Digital Object Identifier :
10.1109/23.211347
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1992
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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