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A novel two-step oxided silicon wafer direct bonding process (TSDB) for fabricating high-quality SOI substrates is presented, which has no contamination, no complex thinning process and no subsurface damage. The fracture strength of the SOI/TSDB material is 180 kg/cm2. SOI/TSDB NMOS and PMOS devices (0.8-3 mu m) have shown that the typical values of electron and hole surface channel mobility are 680 and 320 cm2/Vs, respectively. A high device transconductance and high on-off current ratio have also been obtained.
Date of Publication: 6 March 1989