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High performance of induced-channel heterojunction field-effect transistor (HFET)

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3 Author(s)
Mand, R.S. ; Bell Northern Res. Ltd., Ottawa, Ont., Canada ; Eicher, S. ; SpringThorpe, A.J.

AlGaAs/GaAs high-performance, minority-carrier, induced-channel, heterojunction field-effect transistors (HFETs) fabricated on semi-insulating GaAs using molecular beam epitaxy (MBE) are reported. A 0.6 mu m self-aligned gate HFET exhibited a room-temperature transconductance of 540 mS/mm with a cutoff frequency of 25 GHz.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 6 )

Date of Publication:

6 March 1989

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