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0.1-μm-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

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4 Author(s)
Y. Omura ; NTT LSI Lab., Kanagawa, Japan ; S. Nakashima ; K. Izumi ; T. Ishii

A 0.1-μm-gate CMOS/SIMOX is fabricated using high-quality SIMOX substrates with a sub-100-nm-thick buried oxide layer. In addition, 0.085-μm-gate nMOSFETs/SIMOX and pMOSFETs/SIMOX with 8-nm-thick silicon active layers have been fabricated. The prospects for improving the performance of 0.1-μm-gate CMOS/SIMOX devices are discussed in detail

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 5 )