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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:40 Issue:5 Help

Accurate extraction of contact resistivity on Kelvin D-resistor structures using universal curves from simulation

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3 Author(s)
Santander, J. ; Centro Nacional de Microelectronica, Bellaterra, Spain ; Lozano, M. ; Cane, C.

An accurate procedure to extract contact resistivity of metal-semiconductor contacts from contact resistance measurements made on a D-resistor-type Kelvin cross test structure is presented. The effects of spreading currents are taken into account through simulation and a set of universal curves that eliminates the need of further simulations is computed. The values given can be incorporated in any contact resistance measurement routine to extract the actual value of contact resistivity along with an estimation of the error. The two-dimensional model is validated with experimental results

Published in:
Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 5 )

Date of Publication: May 1993

Page(s):
944 - 950
ISSN :
0018-9383
INSPEC Accession Number:
4424243
Digital Object Identifier :
10.1109/16.210203
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
May 1993
Sponsored by :
IEEE Electron Devices Society

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