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A silicon double switching inversion-controlled switch for multiple-valued logic applications

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4 Author(s)
Fang, Y.K. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Liu, C.-R. ; Chen, K.-H. ; Jun-Dar Hwang

A device with the structure of metal/thin insulator/crystalline silicon (n+-p)/thin insulator/metal (MISSIM) has been demonstrated to possess a double switching characteristics, which is expected to generate multiple stable states easier than the conventional resonant tunneling devices with multiple negative resistance for multiple-valued logic applications. Based on current-voltage measurements with or without light irradiation, and under the negative gate-biased condition, the operation mechanism of the MISSIM structure is proposed and illustrated in detail

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 5 )