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Low-power 1/2 frequency dividers using 0.1-μm CMOS circuits built with ultrathin SIMOX substrates

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4 Author(s)
Fujishima, M. ; Dept. of Electron. Eng., Tokyo Univ., Japan ; Asada, K. ; Omura, Y. ; Izumi, K.

Four types of frequency dividers were fabricated on SIMOX/SOI (separation by implanted oxygen/silicon on insulator) substrates. A novel circuit among these four circuits showed the highest operation frequency of 1.2 GHz under 1-V supply voltage, with gate lengths of 0.15 and 0.1 μm. Power consumption was no more than 50 and 62 μW for both 0.15- and 0.1-μm gate designs, respectively

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:28 ,  Issue: 4 )