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Low-power on-chip supply voltage conversion scheme for ultrahigh-density DRAMs

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5 Author(s)

In order to achieve 3.3-V 1-Gb DRAM and beyond, a new on-chip supply voltage conversion scheme that converts 3.3-V external supply voltage, Vext, to lowered 1.5-V internal supply voltage, Vent, without any power loss within the voltage converter is proposed. This scheme connects two identical DRAM circuits in series between Vixt and Vss. By operation of two DRAM circuits with the same clock timing, the voltage between two DRAMs, Vint, is automatically fixed to 1/2Vext. Therefore, each upper and lower DRAM circuit can operate at lowered 1/2Vext without use of the conventional voltage converter. This scheme was successfully verified by an experimental system using 4-Mb DRAMs. Utilizing the proposed scheme, power dissipation was reduced by as much as 50% and stable operation was achieved without access speed penalty

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:28 ,  Issue: 4 )