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Design techniques for high-throughput BiCMOS self-timed SRAMs

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2 Author(s)
Yokomizo, K. ; Oki Electric Ind. Co. Ltd., Tokyo, Japan ; Naito, K.

Design techniques for a high-throughput BiCMOS self-timed SRAM are described. A new BiCMOS read circuit using a pipelined read architecture and a BiCMOS complementary clocked driver (BCCD) are proposed to reduce the operating cycle time. A 8192×9-b dual-port self-timed SRAM designed using the proposed techniques achieved a clock cycle time of 3.0 ns, that is, a 333-MHz operating frequency, by SPICE simulation on model parameters for 0.8-μm BiCMOS technology. A high-speed built-in self-test (BIST) circuit was studied and designed for the 3.0-ns cycle SRAM. It is confirmed that the BIST circuit allows the 3.0-ns cycle SRAM to test at its maximum operating frequency

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:28 ,  Issue: 4 )