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Microwave noise characterisation of poly-emitter bipolar junction transistors

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2 Author(s)
Deen, M.J. ; Northern Telecom Ltd., Nepean, Ont., Canada ; Ilowski, J.J.

The microwave noise characteristics of poly-emitter bipolar junction transistors have been evaluated in a 0.8 mu m silicon BiCMOS process, at frequencies between 1 and 5.6 GHz and for collector currents between 0.5 and 15 mA. Using a small-signal model for the poly-emitter bipolar junction transistors, very good agreement has been obtained between measurements and calculations of both noise figure (FMIN) against frequency, and FMIN against collector current. It is found that FMIN was 2.3 dB at 1 GHz and 8.3 dB at 5.6 GHz for a collector current of 5 mA.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 8 )