Resistorless ESD protection device for high speed CMOS circuits

A novel, resistorless electrostatic-discharge (ESD)-protection device for high-speed CMOS circuits, consisting of two thick oxide n-channel MOSFETs in the same p-well, has been designed, fabricated, and tested. It can be used to protect inputs or outputs. The advantages include (1) minimum input RC delay time minimized; (2) no power consumption even if input voltage goes above 5-V power supply; (3) military ESD specification exceeded with small layout size; and (4) no latch-up due to input overvoltage stress.<
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