Cart (Loading....) | Create Account
Close category search window

Resistorless ESD protection device for high speed CMOS circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Say, Q. ; Nat. Semicond. Corp., Santa Clara, CA, USA

A novel, resistorless electrostatic-discharge (ESD)-protection device for high-speed CMOS circuits, consisting of two thick oxide n-channel MOSFETs in the same p-well, has been designed, fabricated, and tested. It can be used to protect inputs or outputs. The advantages include (1) minimum input RC delay time minimized; (2) no power consumption even if input voltage goes above 5-V power supply; (3) military ESD specification exceeded with small layout size; and (4) no latch-up due to input overvoltage stress

Published in:

Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988

Date of Conference:

16-19 May 1988

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.