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Design of precision capacitors for analog applications

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6 Author(s)
St.Onge, S.A. ; IBM Technol. Products, Essex Junction, VT, USA ; Franz, S.G. ; Puttlitz, A. ; Kalinoski, A.
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Two capacitors incorporated in a baseline BiCMOS technology without added process complexity are described and analyzed. The first is formed between degenerately doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both structures, the insulator is a deposited or grown oxide. The sensitivity of the capacitor voltage coefficient to oxide thickness and surface dopant concentration is discussed theoretically and compared to measured data. The two capacitors are optimized to exhibit very low voltage coefficients

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:15 ,  Issue: 6 )

Date of Publication:

Dec 1992

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